QUANTITATIVE-ANALYSIS OF PICOSECOND TRANSIENT MULTIWAVE-MIXING-MEDIATED BEAM-AMPLIFICATION EFFECT IN SILICON

被引：8

作者：

KHOO, IC

ZHOU, P

LINDQUIST, RG

LOPRESTI, P

机构：

[1] Department of Electrical Engineering, Pennsylvania State University, University Park

来源：

PHYSICAL REVIEW A | 1990年 / 41卷 / 01期

关键词：

D O I：

10.1103/PhysRevA.41.408

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A quantitative transient multiwave-mixing theory is developed to analyze recently observed picosecond-laser-amplification effects in silicon. Our calculations and comparison with experimental data show the importance of accounting for side diffractions (even in regions of large phase mismatches) and the temporally vastly changing self- and mutual-phase-modulations, besides other physical, material, and optical parameters. © 1990 The American Physical Society.

引用

页码：408 / 413

页数：6

共 9 条

[1]

Eichler H. J., 1986, LASER INDUCED DYNAMI

[2] PICOSECOND PULSE AMPLIFICATION BY COHERENT WAVE MIXING IN SILICON [J].