X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSIS OF ION-BEAM-INDUCED OXIDATION OF GAAS AND ALGAAS

被引：10

作者：

ALAY, JL ^{[1
]}

VANDERVORST, W ^{[1
]}

机构：

[1] UNIV BARCELONA,CARACTERITZACIO MAT MICROELECTRON LAB,E-08028 BARCELONA,SPAIN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.577731

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The oxidation of GaAs and A]GaAs targets subjected to O2+ bombardment has been analyzed, using in situ x-ray photoelectron spectroscopy, as a function of time until steady state is reached. The oxides formed by the O2+ bombardment have been characterized in terms of composition and binding energy. A strong energy and angular dependence for the oxidation of As relative to Ga is found. Low energies as well as near normal angles of incidence favor the oxidation of As. The difference between Ga and As can be explained in terms of the formation enthalpy for the oxide and the excess supply of oxygen. In an AlGaAs target the Al is very quickly completely oxidized irrespective of the experimental conditions. The steady state composition of the altered layers show in all cases a preferential removal of As.

引用

页码：2926 / 2930

页数：5

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