GENERATION-RECOMBINATION NOISE OF NI-DOPED GE IN TEMPERATURE RANGE 350 DEGREES -100 DEGREES K AND CAPTURE CROSS-SECTIONS OF NI IN GE

被引：15

作者：

KLAASSEN, FM

BOOY, HC

BLOK, J

机构：

来源：

PHYSICA | 1961年 / 27卷 / 01期

关键词：

D O I：

10.1016/0031-8914(61)90020-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：48 / &

共 20 条

[1] CARRIER CAPTURE PROBABILITIES IN NICKEL DOPED GERMANIUM
BATTEY, JF
BAUM, RM
[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1634 - 1637
[2] BERNARD M, 1958, U
[3] THE STATISTICS OF CHARGE CARRIER FLUCTUATIONS IN SEMICONDUCTORS
BURGESS, RE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1020 - 1027
[4] EFFECT OF NICKEL AND COPPER IMPURITIES ON THE RECOMBINATION OF HOLES AND ELECTRONS IN GERMANIUM
BURTON, JA
HULL, GW
MORIN, FJ
SEVERIENS, JC
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 853 - 859
[5] FASSETT JR, 1958, DISSERTATION
[6] INFRARED PROPERTIES OF GOLD IN GERMANIUM
JOHNSON, L
LEVINSTEIN, H
[J]. PHYSICAL REVIEW, 1960, 117 (05): : 1191 - 1203
[7] KALASHNIKOV SG, 1959, SOV PHYS-SOL STATE, V1, P491
[8] CARRIER DENSITY FLUCTUATIONS IN SEMICONDUCTORS AND PHOTOCONDUCTORS WITH ONE KIND OF TRAPPING CENTERS
KLAASSEN, FM
VANVLIET, KM
BLOK, J
[J]. PHYSICA, 1960, 26 (08): : 605 - 617
[9] KLAASSEN FM, 1961, DISSERTATION
[10] NEWMAN R, 1958, BULL AM PHYS SOC, V3, P15