OPTICAL 2ND HARMONIC-GENERATION FROM THE SI(111)-GA INTERFACE

被引：16

作者：

KELLY, PV

OMAHONY, JD

MCGILP, JF

RASING, T

机构：

[1] UNIV DUBLIN TRINITY COLL, DEPT PURE & APPL PHYS, DUBLIN 2, IRELAND

[2] CATHOLIC UNIV NIJMEGEN, MAT RES INST, 6525 ED NIJMEGEN, NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90270-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The deposition of Ga on clean Si(111) has a strong effect on the optical second harmonic generation from this surface. By measuring both intensity and phase of the SHG signals, a resonant enhancement is observed around 1/3 of a monolayer for excitation with 1064 nm. This enhancement is absent for 634 nm excitation. These observations are related to the electronic structure of the Si-Ga interface.

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收藏

页码：453 / 456

页数：4

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