AMORPHOUS BORON FILMS

被引：19

作者：

FELDMAN, C

机构：

来源：

关键词：

D O I：

10.1016/0025-5408(68)90052-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：95 / &

共 30 条

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[2] ALADINSK.VK, 1965, FIZ TVERD TELA+, V7, P1460
[3] AVALANCHE-INDUCED NEGATIVE RESISTANCE IN THIN OXIDE FILMS
CHOPRA, KL
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 184 - &
[4] UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS
CHYNOWETH, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1161 - 1165
[5] DIETZ W, 1965, PREPARATION PROPERTI, V2, P301
[6] DZHAMAGI.SZ, 1965, FIZ TVERD TELA+, V7, P1259
[7] FELDMAN C, 1965, PREPARATION PROPERTI, V2, P235
[8] GAULE GK, 1965, PREPARATION PROPE ED, V2, P35
[9] GAULE GK, 1965, PREPARATION PROPE ED, V2, P301
[10] GAULE GK, 1965, PREPARATION PROPE ED, V2