ANOMALOUS HALL EFFECT IN SEMICONDUCTORS

被引：6

作者：

BASTIN, AJF

LEWINER, C

FAYET, N

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(70)90215-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：817 / &

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[5]

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[6] THEORY OF THE HALL EFFECT IN FERROMAGNETIC SUBSTANCES [J].

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[10]

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