AC ELECTROLUMINESCENCE OF ZNS-LNF3 AND ZNS-MN THIN-FILMS - EXCITATION MECHANISMS AND MEMORY EFFECTS

被引：10

作者：

BENOIT, J

BENALLOUL, P

PARROT, R

MATTLER, J

机构：

[1] Université P. et M. Curie, Laboratoire de Luminescence, Tour 13, 4 place Jussieu

来源：

JOURNAL OF LUMINESCENCE | 1979年 / 18-9卷 / JAN期

关键词：

D O I：

10.1016/0022-2313(79)90227-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Thin film E.L. of ZnS:LnF3 and ZnS:Mn in MISM and MISIM structures is investigated. It is first demonstrated that E.L. is due to carriers accelerated in barriers uniformly distributed in the ZnS layer. Secondly it is shown that low electric field domains exist where traps can be emptied only under a high voltage. It is finally suggested that these domains could be associated with the observed memory effects. © 1979.

引用

页码：739 / 742

页数：4

共 8 条

[1] HENISCH HK, 1962, ELECTROLUMINESCENCE, V5, P56
[2] Inoguchi T., 1977, Electroluminescence, P197, DOI 10.1007/3540081275_6
[3] EXCITATION MECHANISM OF ELECTROLUMINESCENT ZNS THIN-FILMS DOPED WITH RARE-EARTH IONS
KOBAYASHI, H
TANAKA, S
SASAKURA, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) : 1110 - 1114
[4] VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES
KOBAYASHI, H
TANAKA, S
SASAKURA, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) : 264 - 270
[5] ELECTRON INJECTION MECHANISM OF ELECTROLUMINESCENT ZNS - TB3+ FILMS
KOBAYASHI, H
TANAKA, S
SASAKURA, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (12) : 1854 - 1861
[6] LAWTHER C, 1977, PHYS STATUS SOLIDI A, V44, P313, DOI 10.1002/pssa.2210440133
[7] MARELLO V, 1977, APPL PHYS LETT, V31, P452
[8] EVIDENCE FOR DIRECT IMPACT EXCITATION OF MN CENTERS IN ELECTROLUMINESCENT ZNS-MN FILMS
TANAKA, S
KOBAYASHI, H
SASAKURA, H
HAMAKAWA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5391 - 5393

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