VERY LARGE MAGNETORESISTANCE EFFECTS INDUCED BY ANTIPARALLEL MAGNETIZATION IN 2 ULTRATHIN COBALT FILMS

被引：90

作者：

DUPAS, C ^{[1
]}

BEAUVILLAIN, P ^{[1
]}

CHAPPERT, C ^{[1
]}

RENARD, JP ^{[1
]}

TRIGUI, F ^{[1
]}

VEILLET, P ^{[1
]}

VELU, E ^{[1
]}

RENARD, D ^{[1
]}

机构：

[1] UNIV PARIS 11,INST OPT THEOR & APPL,CNRS,URA 014,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.345925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetoresistance (MR) and magnetization measurements by SQUID have been performed on Au/Co.Au/Co/Au multilayers in which the two ultrathin cobalt films have perpendicular magnetizations and different coercive fields Hc1 and Hc2 due to their different thicknesses. The two Co layers are magnetically uncoupled, as shown by their well separated square hysteresis loops. The MR exhibits a plateau for magnetic fields H such as H c1<H<Hc2, giving antiparallel orientation of their magnetization. The δR/R value is 1.4% at 300 K and 6% at 4.2 K. These experiments confirm the mechanism of spin-dependent diffusion at the interfaces leading to an increase of the resistance when the two magnetic layers have antiparallel magnetizations.

引用

页码：5680 / 5682

页数：3

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