A NOVEL RF-INSENSITIVE EED UTILIZING AN INTEGRATED METAL-OXIDE-SEMICONDUCTOR STRUCTURE

被引：11

作者：

BAGINSKI, TA

BAGINSKI, ME

机构：

[1] Electrical Engineering Department, Auburn University, Auburn, AL

来源：

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 1990年 / 32卷 / 02期

关键词：

D O I：

10.1109/15.52406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The description and characterization of a novel electro-explosive device (EED) is presented here. The structure is designed, using microelectronic fabrication techniques, to be inherently immune to radio frequency (RF) radiation and also offers protection against stray signals associated with RF-induced arcing. A detailed discussion of the structure, which includes the fundamental mechanisms of operation, fabrication techniques, the device's frequency response and sensitivity to RF-induced arcing, and its compatibility with present fire control systems, is provided. Preliminary test results of the prototype device are discussed and show a significant improvement in the system's overall EMI immunity. These results include bench and field measurements of the structure's RF response for frequencies of 10–225 MHz and field measurements of the device's sensitivity to RF-induced arcing. The measurements indicate a significant reduction in real power dissipated by an EED employing the novel structure over an EED employing a conventional bridgewire (20 dB at 90 MHz). © 1990 IEEE

引用

页码：106 / 112

页数：7

共 25 条

[1]

ADELMAN SM, 1965, ELECTRONICS, V38

[2]

BISHOP AE, 1984, RADIO ELECTRON ENG, V54

[3]

DEB GK, 1985 P IEEE INT S EL

[4]

GATE M, 1984, ELECTRON REP, V3

[5]

GLASER AB, 1979, INTEGRATED CIRCUIT E

[6]

GRAY RI, 1970, NWL TR2482 TECH REP

[7]

GRINOCH A, 1980, 11TH MEAS TEST METH

[8]

Hayt W. H., 2012, ENG ELECTROMAGNETICS, V8th

[9]

HEARD NA, 1985, IEEE T ELECTROMAGN C, V27

[10]

HOFFART HM, 1968, IEEE T ELECTROMAGN C, V10

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