GEOMETRIC MODELING AND DEFECT CHEMISTRY OF ORTHOGONAL DOMAIN INTERFACES IN YBA2CU3O7-X

被引：4

作者：

DARAB, JG

MACCRONE, RK

RAJAN, K

机构：

[1] Materials Engineering Department, Rensselaer Polytechnic Institute, Troy

来源：

PHYSICA C | 1991年 / 173卷 / 3-4期

关键词：

D O I：

10.1016/0921-4534(91)90371-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Geometric modelling of orientational domain interfaces in YBa2Cu3O7-x indicate that dislocations extending from the interface must be present in order to accommodate the lattice mismatch there. The variation of dislocation density with oxygen stoichiometry and interfacial orientation has been determined. For the first time, the effect of oxygen stoichiometry on the interfacial structure and properties of YBa2Cu3O7-x has been modelled. Stereochemical modelling of these dislocations indicates that they are likely sites where both the localization of copper (II) holes and the degradation of superconducting properties may occur.

引用

页码：213 / 219

页数：7

共 18 条

[1]

[Anonymous], 2012, CRYSTAL DEFECTS CRYS

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