RADIATIVE TUNNEL TRANSITIONS IN THE HOPPING CONDUCTION IN DOPED SEMICONDUCTORS IN A STRONG ELECTRIC-FIELD

被引：5

作者：

BEREZIN, AA ^{[1
]}

机构：

[1] UNIV ALBERTA,DEPT PHYS,EDMONTON T6G 2J1,ALBERTA,CANADA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 32期

关键词：

D O I：

10.1088/0022-3719/13/32/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L947 / L949

页数：3

共 10 条

[1] STUDIES OF A CONDUCTIVITY MECHANISM OF BETA-RHOMBOHEDRAL BORON IN A STRONG ELECTRIC-FIELD
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[2] LONG-LIVED EXCITED-STATES AND THE SPONTANEOUS TUNNEL TRANSITIONS IN SOME POSITIVELY CHARGED COLOR CENTER SYSTEMS IN ALKALI-HALIDE CRYSTALS
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[J]. PHYSICS LETTERS A, 1979, 72 (01) : 48 - 50
[3] RADIATIVE TUNNEL TRANSITIONS IN SOME NEGATIVELY CHARGED COLOR CENTER SYSTEMS IN ALKALI-HALIDE CRYSTALS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (06): : L103 - L106
[4] BEREZIN AA, 1977, BORON REFRACTORY BOR, V6, P52
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[J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 7 - &
[7] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .7. NON-OHMIC BEHAVIOUR AND SWITCHING
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[J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (190): : 911 - &
[8] RYVKIN SM, 1973, 5TH P INT C AM LIQ S, P1155
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[10] ZABRODSKII AG, 1974, SOV PHYS SEMICOND+, V8, P322