EFFECT OF CR CONCENTRATION ON ELECTRICAL-PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS SUBSTRATES

被引：3

作者：

UDAGAWA, T

NAKANISI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 08期

关键词：

D O I：

10.1143/JJAP.20.L579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L579 / L582

页数：4

共 10 条

[1] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].

CRONIN, GR ;

HAISTY, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :874-877

[2]

FUKUTA M, 1980, OYO BUTURI, V49, P653

[3]

GIMELFAR.FA, 1970, FIZ TVERD TELA+, V11, P1612

[4]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[5] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS [J].

HUNSPERGER, RG ;

HIRSCH, N .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :349-353

[6] ESR ASSESSMENT OF 3D7 TRANSITION-METAL IMPURITY STATES IN GAP, GAAS AND INP [J].

KAUFMANN, U ;

SCHNEIDER, J .

SOLID STATE COMMUNICATIONS, 1978, 25 (12) :1113-1116

[7] MEASUREMENT OF THE CHROMIUM CONCENTRATION IN SEMI-INSULATING GAAS USING OPTICAL-ABSORPTION [J].

MARTIN, GM ;

VERHEIJKE, ML ;

JANSEN, JAJ ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :467-471

[8]

MULVEY T, 1974, MODERN PHYSICAL TECH, pCH15

[9]

PAMPLIN BR, 1975, CRYST GROWTH, P2

[10]

WILLARDSON RK, 1967, I PHYS C SER, V3, P35

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