DIAMOND FILMS AS THERMAL CONDUCTORS AND ELECTRICAL INSULATORS APPLIED TO SEMICONDUCTOR POWER MODULES

被引:14
作者
FIEGL, B [1 ]
KUHNERT, R [1 ]
SCHWARZBAUER, H [1 ]
KOCH, F [1 ]
机构
[1] TECH UNIV MUNICH,D-85748 GARCHING,GERMANY
关键词
D O I
10.1016/0925-9635(94)90244-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Module technology, i.e. the integrated variety of power devices insulated to ground, has become the most successful technology for power devices. The sandwich structure of the module serves as both an electrical insulator and heat sink to remove the heat generated in the device. Typical heat fluxes of 200 W cm-2 through the chip-substrate interface make it necessary to develop modules with a lower thermal resistance than those available today. With the recent advances in diamond technology, diamond substrates which have unique heat conducting properties are now available. The application of diamond substrates as heat sinks for power dissipating devices is well known. Presented here is an application of diamond films in power device modules in combination with a new low temperature joining technology based purely on solid joining materials. The thermal behaviour of these modules was simulated. Following the simulations power device modules with a diamond film were produced. The thermal properties of the modules were investigated. The results are in good agreement with those of the simulations. It is demonstrated that diamond films together with an advanced joining technology provide a great improvement in thermal management compared with state-of-the-art technologies. For investigation of the electrical insulation as an important parameter for power modules measurements of the I-V characteristics of chemically vapour deposited diamond films were taken. The resistivity of the layers used in our experiments can be increased by an appropriate post-deposition treatment; however, it is still more than two orders of magnitude lower than typical values of alumina substrates. It is found that inhomogeneities possibly determine the electrical insulation properties of chemically vapour deposited diamond layers.
引用
收藏
页码:658 / 662
页数:5
相关论文
共 8 条
[1]  
BOTTGER E, 1993, COMMUNICATION
[2]  
BOUDREAUX PJ, 1991, P GOVT MICROCIRCUIT, V17, P251
[3]  
FIEGL B, UNPUB APPL PHYS LETT
[4]   TI/PT/AU-SN METALLIZATION SCHEME FOR BONDING OF INP-BASED LASER-DIODES TO CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBMOUNTS [J].
KATZ, A ;
WANG, KW ;
BAIOCCHI, FA ;
DAUTREMONTSMITH, WC ;
LANE, E ;
LUFTMAN, HS ;
VARMA, RR ;
CURNAN, H .
MATERIALS CHEMISTRY AND PHYSICS, 1993, 33 (3-4) :281-288
[5]  
LAKE ML, 1991, 2ND P INT C DIAM REL, P479
[6]  
NAKAHATA H, 1991, 2ND P INT S DIAM MAT, P487
[7]   NOVEL LARGE AREA JOINING TECHNIQUE FOR IMPROVED POWER DEVICE PERFORMANCE [J].
SCHWARZBAUER, H ;
KUHNERT, R .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1991, 27 (01) :93-95
[8]   ELECTRICAL-CONDUCTION MECHANISMS IN POLYCRYSTALLINE CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS [J].
SUGINO, T ;
MUTO, Y ;
SHIRAFUJI, J ;
KOBASHI, K .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :797-802