OFF-DIAGONAL DISORDER AND THE METAL-INSULATOR-TRANSITION IN IMPURITY BANDS IN SEMICONDUCTORS

被引：32

作者：

FERTIS, AC ^{[1
]}

ANDRIOTIS, AN ^{[1
]}

ECONOMOU, EN ^{[1
]}

机构：

[1] UNIV ATHENS,ATHENS,GREECE

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.24.5806

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5806 / 5811

页数：6

共 37 条

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