Optical absorption due to vibration of hydrogen-oxygen pairs in silicon

被引：28

作者：

Markevich, VP ^{[1
]}

Suezawa, M ^{[1
]}

Sumino, K ^{[1
]}

机构：

[1] TOHOKU UNIV, MAT RES INST, SENDAI, MIYAGI 98077, JAPAN

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-2卷

关键词：

hydrogen; oxygen; pair; vibration; optical absorption; silicon;

D O I：

10.4028/www.scientific.net/MSF.196-201.915

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical absorption due to pair of hydrogen and oxygen atoms in silicon (Si) has been found for the first time. Hydrogen was doped into Si due to annealing of specimen in hydrogen atmosphere at 1200 degrees C followed by quenching, There was no optical absorption due to hydrogen-oxygen pair at as-quenched state, Hydrogen-oxygen pairs are generated due to annealing. They are generated above 40 degrees C and dissociated above 80 degrees C and disappered above 110 degrees C according to isochronal annealing of 20 degrees C interval, starting from 40 degrees C, for 10 min annealing duration. The peak positions of H-O and D-O pairs are 1075.0 and 1076.3 cm(-1), respectively.

引用

页码：915 / 919

页数：5

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