CRYSTAL-STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF GA1.78CR0.89S4

被引:8
作者
HAEUSELER, H
KWARTENGACHEAMPONG, W
JUNG, M
机构
[1] Univ Siegen, Siegen, West Ger, Univ Siegen, Siegen, West Ger
关键词
CRYSTALS - Structure - ELECTRIC CONDUCTIVITY - Measurements;
D O I
10.1016/0022-3697(88)90026-1
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The crystal structure of Ga//1//. //7//8Cr//0//. //8//9S//4 has been determined from single crystal X-ray diffraction data and refined to R equals 0. 026. It crystallizes trigonally in a defect variant of the FeGa//2S//4-type with the space group P3ml with z equals 1 and lattice constants a equals 360. 43 (2) and c equals 1194. 86 (2) pm with Ga atoms occupying the tetrahedral sites and Cr atoms the octahedral sites. The electrical conductivity of Ga//1//. //7//8Cr//0//. //8//9S//4 measured on powder samples is about 7. 10** minus **5 ohm** minus **1 cm** minus **1 at 400 degree C with an activation energy for conduction of 1. 2eV.
引用
收藏
页码:767 / 768
页数:2
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