FAR-INFRARED MEASUREMENTS OF HOLSTEIN PROCESSES AND LOW-ENERGY ALPHA-TR-F-2(OMEGA) STRUCTURE IN V3SI

Far-infrared measurements in thin films of V3Si at 19 K give evidence of Holstein processes. An analysis according to Allen's formulation yields a transport electron-phonon spectral function αtr2F(ω) which is enhanced at low energies relative to the phonon spectrum alone and exhibits a new peak at 6(±2) meV. The enhancement and structure strongly influence calculated values of Tc and the electron-phonon parameter λ̄tr for V3Si. The Holstein analysis resolves a large discrepancy between far-infrared and near-infrared values for the plasma frequency. © 1979 The American Physical Society.