INTERFACIAL REACTIONS BETWEEN PALLADIUM THIN-FILMS AND INP

被引：17

作者：

IVEY, DG

ZHANG, L

JIAN, P

机构：

[1] Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, T6G 2G6, Alberta

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1991年 / 2卷 / 01期

关键词：

D O I：

10.1007/BF00695000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Palladium appears to be an important component in ohmic contact metallizations to III-V semiconductors. Very little is known about its interaction with InP. Consequently, the reaction between a thin layer of Pd (congruent-to 100 nm) and an InP substrate has been studied at annealing temperatures ranging from 250-450-degrees-C for up to 30 sec, i.e., typical annealing conditions encountered during contact fabrication. Palladium reacts readily with InP, initially forming an amorphous ternary phase, which transforms to crystalline Pd2InP on annealing. Pd2InP has an ordered cubic structure, with a lattice parameter of 0.830 nm, and grows epitaxially on InP. Microtwins, 2-3 atomic layers thick, have been identified in the ternary phase and these form along the (110) and (1BAR10) planes.

引用

页码：21 / 27

页数：7

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