ANISOTROPIC ETCH-STOP PROPERTIES OF NITROGEN-IMPLANTED SILICON

被引：4

作者：

ACERO, MC ^{[1
]}

ESTEVE, J ^{[1
]}

MONTSERRAT, J ^{[1
]}

BAUSELLS, J ^{[1
]}

PEREZRODRIGUEZ, A ^{[1
]}

ROMANORODRIGUEZ, A ^{[1
]}

MORANTE, JR ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT FIS APLICADA & ELECTR,LCMM,E-08028 BARCELONA,SPAIN

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 45卷 / 03期

关键词：

ETCH-STOP PROPERTIES; NITROGEN; SILICON;

D O I：

10.1016/0924-4247(94)00835-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the anisotropic etch-stop properties of buried layers obtained by sub-stoichiometric nitrogen implantation into silicon and annealing has been performed as a function of the processing parameters. The aim of this work is to determine the minimum implantation dose needed for the formation of etch-stop layers stable under high-temperature thermal processing, needed in smart-sensor Si technology, using tetramethyl ammonium hydroxide (TMAH) as etchant in a way that is compatible with CMOS. The results obtained show this value to be in the range (2-4) x 10(17) N cm-2 for an effective N+ implantation energy of 75 keV. After annealing, etching of the N-rich buried layer occurs through localized pitch discontinuities determined by the implantation and annealing processes.

引用

页码：219 / 225

页数：7

共 13 条

[1]

Acero M. C., 1993, Journal of Micromechanics and Microengineering, V3, P143, DOI 10.1088/0960-1317/3/3/012

[2]

BAILEY WE, 1992, ELECTROCHEM SOC P, V9213

[3]

DIEM B, 1990, SENSOR ACTUAT A-PHYS, V21, P1003

[4] ETCH STOP BARRIERS IN SILICON PRODUCED BY ION-IMPLANTATION OF ELECTRICALLY NONACTIVE SPECIES [J].