A GAAS MONOLITHIC LOW-NOISE BROAD-BAND AMPLIFIER

被引：9

作者：

ARCHER, JA

WEIDLICH, HP

PETTENPAUL, E

PETZ, FA

HUBER, J

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1981年 / 16卷 / 06期

关键词：

D O I：

10.1109/JSSC.1981.1051657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：648 / 652

页数：5

共 11 条

[1]

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[2]

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EDEN, RC ;

WELCH, BM ;

ZUCCA, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :419-426

[4]

GUPTA AK, 1979, IEDM TECH DIG DEC, P269

[5] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

HOBGOOD, HM ;

ELDRIDGE, GW ;

BARRETT, DL ;

THOMAS, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :140-149

[6]

MEYER RG, 1981, ISSCC NEW YORK, P186

[7]

Nanbu S., 1980, International Electron Devices Meeting. Technical Digest, P126

[8] THE MATCHED FEEDBACK-AMPLIFIER - ULTRAWIDE-BAND MICROWAVE AMPLIFICATION WITH GAAS-MESFETS [J].

NICLAS, KB ;

WILSER, WT ;

GOLD, RB ;

HITCHENS, WR .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (04) :285-294

[9]

ULRICH E, 1978, MICROWAVES OCT, P66

[10]

VANTUYL R, 1978, ISSCC, P72

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