THE CHARACTERIZATION OF MISFIT DISLOCATIONS AT (100) HETEROJUNCTIONS IN III-V-COMPOUND SEMICONDUCTORS

被引：20

作者：

DECOOMAN, BC

CARTER, CB

CHAN, KT

SHEALY, JR

机构：

来源：

ACTA METALLURGICA | 1989年 / 37卷 / 10期

关键词：

D O I：

10.1016/0001-6160(89)90312-X

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：2779 / 2793

页数：15

共 38 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[2] AHEARN JS, 1977, J MATER SCI, V122, P699
[3] BOURRET A, 1982, PHILOS MAG A, V45, P1, DOI 10.1080/01418618208243899
[4] CHAM KT, 1986, THESIS CORNELL U
[5] CHAN KT, 1986, THESIS CORNELL U
[6] DIFFRACTION FROM SINGLE AND OVERLAPPING STACKING-FAULTS IN FCC CRYSTALS
CLAREBROUGH, LM
FORWOOD, CT
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (01): : 355 - 366
[7] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS
COCKAYNE, DJ
RAY, ILF
WHELAN, MJ
[J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (168): : 1265 - &
[8] DECOOMAN BC, 1985, MRS S P, V37, P329
[9] DECOOMAN BC, IN PRESS PHYSICA STA
[10] DECOOMAN BC, 1987, THESIS CORNELL U