2-PHOTON TRANSITION IN INDIRECT-BAND-GAP SEMICONDUCTORS

[1] Ashkinadze B. M., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1511

[2] ASHKINADZE BM, 1969, SOV PHYS SEMICOND+, V2, P1261

[3] ASHKINADZE BM, 1968, 9 P INT C PHYS SEM M

[4] BALSEV I, 1966, J PHYS SOC JAPAN, V22, P101

[5] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[6] Bardeen J., 1956, PHOT C NEW YORK, P146

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +

[9] ELECTRON SCATTERING IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) : 131 - 149

[10] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &

[1] Ashkinadze B. M., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1511

[2] ASHKINADZE BM, 1969, SOV PHYS SEMICOND+, V2, P1261

[3] ASHKINADZE BM, 1968, 9 P INT C PHYS SEM M

[4] BALSEV I, 1966, J PHYS SOC JAPAN, V22, P101

[5] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[6] Bardeen J., 1956, PHOT C NEW YORK, P146

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +

[9] ELECTRON SCATTERING IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) : 131 - 149

[10] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &