REFLECTIVITY MEASUREMENTS ON EPITAXIAL GaAs-GaP ALLOYS

被引：9

作者：

Williams, E. W. ^{[1
]}

Jones, C. E. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75265 USA

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 08期

关键词：

D O I：

10.1016/0038-1098(65)90290-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Reflectivity measurements in the visible and the ultra-violet are reported over the complete composition range of the GaAs-GaP alloy system. The first major reflectivity peaks in the two compounds are thought to be caused by different electron transitions and our measurements sustantiated this.

引用

页码：195 / 198

页数：4