CALCULATED BAND STRUCTURES, OPTICAL-CONSTANTS AND ELECTRONIC CHARGE DENSITIES FOR INAS AND INSB

被引：11

作者：

DEALVAREZ, CV

WALTER, JP

BOYD, RW

COHEN, ML

机构：

[1] UNIV CALIF, DEPT PHYS, BERKELEY, CA 94720 USA

[2] LAWRENCE BERKELEY LAB, INORG MAT RES DIV, BERKELEY, CA 94720 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1973年 / 34卷 / 02期

关键词：

D O I：

10.1016/0022-3697(73)90093-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：337 / 345

页数：9

共 22 条

[1] BAND STRUCTURE OF ALPHA-SN INSB AND CDTE INCLUDING SPIN-ORBIT EFFECTS [J].

BLOOM, S ;

BERGSTRESSER, TK .

SOLID STATE COMMUNICATIONS, 1968, 6 (07) :465-+

[2] LOCAL PSEUDOPOTENTIAL MODEL FOR GASB - ELECTRONIC AND OPTICAL PROPERTIES [J].

CAHN, RN ;

COHEN, ML .

PHYSICAL REVIEW B, 1970, 1 (06) :2569-&

[3] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[4]

Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

[5] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

[6] OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].

DIXON, JR ;

ELLIS, JM .

PHYSICAL REVIEW, 1961, 123 (05) :1560-&

[7] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].

EHRENREICH, H .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&

[8] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].

EHRENREICH, H ;

PHILLIPS, JC ;

PHILIPP, HR .

PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&

[9] INTER-CONDUCTION-BAND TRANSITIONS IN ELECTROREFLECTANCE SPECTRUM OF INSB [J].

GLOSSER, R ;

FISCHER, JE ;

SERAPHIN, BO .

PHYSICAL REVIEW B, 1970, 1 (04) :1607-&

[10]

Herman F., 1963, ATOMIC STRUCTURE CAL

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