ULTRASONIC SUPPORTED DEVELOPMENT OF IRRADIATED MICROSTRUCTURES

被引：16

作者：

ELKHOLI, A

MOHR, J

STRANSKY, R

机构：

[1] Kernforschungszentrum Karlsruhe GmbH, Institut für Mikrostrukturtechnik, 76021 Karlsruhe

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90141-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the first step of the LIGA process a resist layer typically PMMA (polymethyl-methacrylate), is patterned by deep etch x-I-ay lithography. Then the exposed parts are dissolved by an organic developer. In order to achieve perfect microstructures, the development must. be free of residues, especially, with a view to the following electroforming step. In case of microstructures with extreme aspect ratios the development process is not only a problem of solubility- but also of transportation. Our studies have proved that the development process can be improved through application of ultrasound, especially if the power density is raised or the frequency is lowered, because in both cases the amount of transient cavitation rises, with the restriction imposed that fragile microstructures might be destroyed. Therefore, the development parameters need to be optimised for each geometry.

引用

页码：219 / 222

页数：4