GROWTH AND PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS

The epitaxial growth of Hg1-xCdxTe has been investigated by means of a technique in which the source and substrate are close spaced, and both under isothermal conditions and with a temperature gradient between the source and substrate. The effect of excess mercury pressure in the ampoule on the growth rate and the compositional profile within the isothermally grown epitaxial layers has been investigated in detail. A simple isothermal process is described for making epitaxial layers having a controlled surface alloy composition. The presence of a temperature gradient between the source and the substrate significantly enhances the deposition rate and results in a linear relation between the layer thickness and deposition time. The electrical and optical properties of the isothermally grown epitaxial layers are discussed along with the results of photoconductivity measurements on layers having surface composition of x=0.20 and x=0.25. © 1969 The American Institute of Physics.