SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTES

被引：27

作者：

WILLIAMS, R

机构：

[1] RCA Laboratories, Princeton

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.326198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Schottky barrier forms at the interface between amorphous silicon and an electrolyte. The barrier height, φB, can be estimated from the open-circuit photovoltage. It depends on the potential-determining ion in solution and is a linear function of the redox potential. The magnitude of φB ranged from 1.0 to 1.7 eV for various electrolyte compositions.

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页码：2848 / 2851

页数：4

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