CHARACTERISTICS OF GAAS LASER ARRAYS DESIGNED FOR BEAM ADDRESSABLE MEMORIES

被引:13
作者
WIEDER, H
WERLICH, H
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10.1147/rd.154.0272
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
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页码:272 / &
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共 10 条
[1]   LOW-TEMPERATURE BEAM-ADDRESSABLE MEMORY [J].
FAN, GY ;
GREINER, JH .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (2P2) :1216-&
[2]  
HATZ J, 1967, IEEE J QUANTUM ELECT, VQE 3, P656
[3]  
HATZ J, 1967, IEEE J QUANTUM ELECT, VQE 3, P643
[4]  
LAVENBERG S, PRIVATE COMMUNICATIO
[5]  
MARINACE J, 1970, 85 EL SOC M
[6]   EXPERIMENTAL FABRICATION OF ONE-DIMENSIONAL GAAS LASER ARRAYS [J].
MARINACE, JC .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (04) :258-&
[7]  
MILLER RC, 1964, 7 INT C PHYS SEM PAR
[8]   FABRICATION AND PROPERTIES OF MONOLITHIC LASER DIODE ARRAYS [J].
SPROKEL, GJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (04) :265-&
[9]   MAGNETO-OPTIC DETECTION OF HIGH-DENSITY RECORDINGS [J].
TREVES, D .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (03) :1192-&
[10]  
WIEDER H, TO BE PUBLISHED