ROLE OF INTERFACE OPTICAL PHONONS IN COOLING HOT CARRIERS IN GAAS-ALAS QUANTUM-WELLS

被引：11

作者：

OBERLI, DY

BOHM, G

WEIMANN, G

机构：

[1] Walter Schottky Institut, Technische Universitat Munchen

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.47.7630

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an experimental study of the nonequilibrium phonon population generated by the relaxation of hot carriers photoexcited in GaAs-AlAs quantum wells. The optical phonon population is measured by anti-Stokes Raman scattering performed in the plane of the layers. The measured occupation numbers suggest that interface phonon modes contribute significantly to the relaxation dynamics over the lifetime of an electron-hole pair. These results are explained on the basis of the interplay between emission and reabsorption of hot phonons, which leads to a large population of interface phonons under steady-state conditions.

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收藏

页码：7630 / 7633

页数：4

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