FABRICATION AND CHARACTERIZATION OF S-N-S PLANAR MICROBRIDGES

被引：9

作者：

VANDOVER, RB ^{[1
]}

HOWARD, RE ^{[1
]}

BEASLEY, MR ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1979年 / 15卷 / 01期

关键词：

D O I：

10.1109/TMAG.1979.1060039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the potential of the planar S-N-S geometry for a high-Tc Josephson device technology, developed fabrication techniques compatible with integrated processing and dealt with the problems of processing high-T materials with their sensitivity to impurities and damage. We have used both Nb3Sn and Nb for the banks and Cu for the normal bridge. Device with a normal link less than 1 micron long exhibit Josephson effects over a wide temperature range 0 < T < T. We discuss the electrical properties of these glages and evaluate the potential of this geometry for high resistance (RR = 1-10Ω) devices. The I-V characteristics are compared to the predictions of a simple TDGL model. © 1979 IEEE

引用

页码：574 / 577

页数：4

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