OPTICAL-ABSORPTION OF AS-DEPOSITED INDIUM SELENIDE THIN-FILMS

Thin films of indium selenide were obtained by thermal evaporation of the stoichiometric bulk compound onto glass substrates at a residual pressure of 10-5 torr. Electrical conductivity of the films was measured at various temperatures in the range 300 to 525 K. The optical absorption in the visible and near ir region was also measured. The results indicated an absorption characteristic of an indirect transition at an energy of 0.96 eV whereas an observed absorption at 1.32 eV was found to be characteristic of a direct transition. © 1990.