IMPURITIES IN SILICON SOLAR-CELLS

被引：365

作者：

DAVIS, JR ^{[1
]}

ROHATGI, A ^{[1
]}

HOPKINS, RH ^{[1
]}

BLAIS, PD ^{[1
]}

RAICHOUDHURY, P ^{[1
]}

MCCORMICK, JR ^{[1
]}

MOLLENKOPF, HC ^{[1
]}

机构：

[1] HEMLOCK SEMICOND CORP, MIDLAND, MI USA

来源：

关键词：

D O I：

10.1109/T-ED.1980.19922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：677 / 687

页数：11

共 11 条

[1] Davis J. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P490
[2] CRYSTAL-GROWTH CONSIDERATIONS IN USE OF SOLAR GRADE SILICON
HOPKINS, RH
SEIDENSTICKER, RG
RAICHOUDHURY, P
BLAIS, PD
MCCORMICK, JR
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 493 - 498
[3] HOPKINS RH, 1978, DOEJPL954331783 TECH
[4] HOPKINS RH, 1977, DOEJPL954331771 TECH
[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[6] APPLICATION OF THE SUPERPOSITION PRINCIPLE TO SOLAR-CELL ANALYSIS
LINDHOLM, FA
FOSSUM, JG
BURGESS, EL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) : 165 - 171
[7] CAPACITANCE TRANSIENT SPECTROSCOPY
MILLER, GL
LANG, DV
KIMERLING, LC
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448
[8] NEUGROSCHEL A, 1977, IEEE T ELECTRON DEV, V24, P662, DOI 10.1109/T-ED.1977.18800
[9] ROHATGI A, UNPUBLISHED
[10] STIRN RJ, 1972, 9TH P IEEE PHOT SPEC, P72