GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE

被引:51
作者
MORKOC, H [1 ]
WITKOWSKI, LC [1 ]
DRUMMOND, TJ [1 ]
STANCHAK, CM [1 ]
CHO, AY [1 ]
STREETMAN, BG [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1049/el:19800535
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:753 / 754
页数:2
相关论文
共 5 条
[1]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[2]  
MORKOC H, 1979, 1979 P CORN C, P71
[3]  
PIANETTA P, 1971, 7TH P INT VAC C 3RD, P615
[4]  
RUSCH JG, 1970, J APPLIED PHYSICS, V41, P3843
[5]  
TSUI DC, 1979, APPL PHYS LETT, V35, P101