MG DOPING OF INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING BIS-CYCLOPENTADIENYL MAGNESIUM

被引:17
作者
ABERNATHY, CR
WISK, PW
PEARTON, SJ
REN, F
机构
[1] ATandT Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.108982
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the feasibility of Mg doping using bis-cyclopentadienyl magnesium (Cp2Mg) during growth of InP and InGaAs by metalorganic molecular beam epitaxy. In InP, hole concentrations between 5X10(16) and 4X10(18) cm-3 were readily attained without degradation of the surface morphology. Comparison with secondary ion mass spectrometry analysis shows good electrical activation for concentrations less-than-or-equal-to 2X10(18) cm-3 though compensation at low doping levels was observed due to compensation from carbon and oxygen impurities which were present at levels of 9X10(16) and 5x10(16) cm-3 , respectively. Mg profiles in InGaAs tended to be more abrupt than those in InP and hole concentrations up to 10(19) cm-3 were achieved. p-InGaAs/n-InP structures annealed at 600-degrees-C for 10 s showed no evidence of Mg diffusion.
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页码:258 / 260
页数:3
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