UNIFIED MODEL FOR FIRST-ORDER TRANSITION AND ELECTRICAL-PROPERTIES OF INAS (001) SURFACES BASED ON ATOM-RESOLVED SCANNING-TUNNELING-MICROSCOPY IMAGING

A unified model that explains two differences between InAs and GaAs (001) surfaces, phase transition and electrical properties, is proposed based on atom-resolved images obtained by scanning tunneling microscopy. The annealed InAs surface has much lower density of kinks in the dimer-vacancy rows than the annealed GaAs. This can be the origin both for strong lateral interaction, which causes the first order surface phase transition, and for low surface state density of the InAs (001) surface.