MAGNETIZATION PROCESS AND MAGNETOSTRICTION OF A 4-PERCENT SI-FE SINGLE-CRYSTAL CLOSE TO (110)[001]

被引：31

作者：

IMAMURA, M ^{[1
]}

SASAKI, T ^{[1
]}

SAITO, A ^{[1
]}

机构：

[1] TOTTORI UNIV,FAC ENGN,DEPT ELECT ENGN,TOTTORI 680,JAPAN

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/TMAG.1981.1061450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2479 / 2485

页数：7

共 19 条

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[8]

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[9] RELATIONSHIP BETWEEN TOTAL LOSSES UNDER TENSILE-STRESS IN 3-PERCENT SI-FE SINGLE-CRYSTALS AND THEIR ORIENTATIONS NEAR (110) [001] [J].

NOZAWA, T ;

YAMAMOTO, T ;

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IEEE TRANSACTIONS ON MAGNETICS, 1978, 14 (04) :252-257

[10] EFFECTS OF SCRATCHING ON LOSSES IN 3-PERCENT SI-FE SINGLE-CRYSTALS WITH ORIENTATION NEAR (110)[001] [J].

NOZAWA, T ;

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IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (02) :972-981

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