PHONON BROADENING OF EXCITONS IN GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：101

作者：

GAMMON, D ^{[1
]}

RUDIN, S ^{[1
]}

REINECKE, TL ^{[1
]}

KATZER, DS ^{[1
]}

KYONO, CS ^{[1
]}

机构：

[1] USA,RES LAB,FT MONMOUTH,NJ 07703

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.51.16785

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have made transmission and reflectivity measurements of the temperature-dependent exciton linewidths for high-quality GaAs/Al0.3Ga0.7As quantum wells with well widths ranging between 28 and 340 and also for bulk GaAs. The LO-phonon contributions to the linewidths are found to depend only weakly on the well width. Detailed microscopic calculations of the well-width dependence of these linewidths have been made and are shown to be in quantitative agreement with experiment. These calculations provide a physical explanation of the weak dependence of the linewidth on the well width. © 1995 The American Physical Society.

引用

收藏

页码：16785 / 16789

页数：5

相关论文

共 25 条

[1] INFLUENCE OF PHONONS AND IMPURITIES ON BROADENING OF EXCITONIC SPECTRA IN GALLIUM-ARSENIDE [J].

ALPEROVICH, VL ;

ZALETIN, VM ;

KRAVCHENKO, AF ;

TEREKHOV, AS .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 77 (02) :465-472

[2] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].

CHEMLA, DS ;

MILLER, DAB ;

SMITH, PW ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275

[3] ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF THE TEMPERATURE-DEPENDENCE OF EXCITON LIFE TIME IN LATTICE-MATCHED AND STRAINED QUANTUM WELL SYSTEMS [J].

CHEN, Y ;

KOTHIYAL, GP ;

SINGH, J ;

BHATTACHARYA, PK .

SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (06) :657-664

[4] QUANTUM-WELL WIDTH DEPENDENCE OF EXCITON PHONON INTERACTION IN CD0.33ZN0.67TE/ZNTE SINGLE QUANTUM-WELLS [J].

DORAN, JP ;

DONEGAN, JF ;

HEGARTY, J ;

FELDMAN, RD ;

AUSTIN, RF .

SOLID STATE COMMUNICATIONS, 1992, 81 (09) :801-805

[5] EXCITONS, PHONONS, AND INTERFACES IN GAAS/ALAS QUANTUM-WELL STRUCTURES [J].

GAMMON, D ;

SHANABROOK, BV ;

KATZER, DS .

PHYSICAL REVIEW LETTERS, 1991, 67 (12) :1547-1550

[6] INTERFACES IN GAAS ALAS QUANTUM-WELL STRUCTURES [J].

GAMMON, D ;

SHANABROOK, BV ;

KATZER, DS .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2710-2712

[7] WELL SIZE DEPENDENCE OF EXCITON LINEWIDTHS IN SEMICONDUCTOR QUANTUM WELLS [J].

HIROSHIMA, T .

SOLID STATE COMMUNICATIONS, 1988, 68 (05) :483-485

[8] GIANT EXCITONIC RESONANCE IN TIME-RESOLVED 4-WAVE-MIXING IN QUANTUM-WELLS [J].

KIM, DS ;

SHAH, J ;

CUNNINGHAM, JE ;

DAMEN, TC ;

SCHAFER, W ;

HARTMANN, M ;

SCHMITTRINK, S .

PHYSICAL REVIEW LETTERS, 1992, 68 (07) :1006-1009

[9] EFFECTS OF BOUNDARY-CONDITIONS ON CONFINED OPTICAL PHONONS IN SEMICONDUCTOR NANOSTRUCTURES [J].

KNIPP, PA ;

REINECKE, TL .

PHYSICAL REVIEW B, 1993, 48 (24) :18037-18042

[10] ELECTRON-PHONON SCATTERING RATES IN QUANTUM WIRES [J].

KNIPP, PA ;

REINECKE, TL .

PHYSICAL REVIEW B, 1993, 48 (08) :5700-5703