ACCEPTOR LEVEL OF SUBSTITUTIONAL NI IN DIAMOND

被引：18

作者：

HOFMANN, DM ^{[1
]}

LUDWIG, M ^{[1
]}

CHRISTMANN, P ^{[1
]}

VOLM, D ^{[1
]}

MEYER, BK ^{[1
]}

PEREIRA, L ^{[1
]}

SANTOS, L ^{[1
]}

PEREIRA, E ^{[1
]}

机构：

[1] UNIV AVEIRO,DEPT FIS,P-3800 AVEIRO,PORTUGAL

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.17618

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Substitutional Ni- in synthetic diamonds has been investigated by electron-paramagnetic resonance (EPR) and photo-EPR. The photo-EPR investigation shows that the Ni- EPR signal can be diminished by optical illumination, and the threshold energy of 2.47±0.02 eV suggests that the acceptor level is located at 3.03 eV above the valence band. The energy dependence of the optical cross section for the electron ionization σn was determined from an analysis of the EPR transients. © 1994 The American Physical Society.

引用

页码：17618 / 17620

页数：3

共 14 条

[1]

Burns RC., 1992, PROPERTIES NATURAL S, P395

[2] A SPECTROSCOPIC STUDY OF OPTICAL-CENTERS IN DIAMOND GROWN BY MICROWAVE-ASSISTED CHEMICAL VAPOR-DEPOSITION [J].