PECULIARITIES OF SILICON AMORPHIZATION AT ION-BOMBARDMENT

被引:42
作者
GERASIMOV, AI
ZORIN, EI
TETELBAUM, DI
PAVLOV, PV
机构
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 12卷 / 02期
关键词
D O I
10.1002/pssa.2210120242
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:679 / +
页数:1
相关论文
共 17 条
  • [1] Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575
  • [2] GERASIMO.AI, 1970, DOKL AKAD NAUK SSSR+, V192, P324
  • [3] Gusev V. M., 1969, Kristallografiya, V14, P1050
  • [4] STUDY OF ANISOTROPY OF RADIATION DAMAGE RATES IN N-TYPE SILICON
    HEMMENT, PLF
    STEVENS, PRC
    [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4893 - &
  • [5] KELLY R, 1971, RADIAT EFF, V10, P247
  • [6] KHAINOVSKAYA VV, 1967, FIZ TVERD TELA, V9, P2043
  • [7] Martynenko Yu. V., 1969, Fizika Tverdogo Tela, V11, P1968
  • [8] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042
  • [9] CONVERSION OF CRYSTALLINE GERMANIUM TO AMORPHOUS GERMANIUM BY ION BOMBARDMENT
    PARSONS, JR
    [J]. PHILOSOPHICAL MAGAZINE, 1965, 12 (120): : 1159 - &
  • [10] PAVLOV PV, 1966, FIZ TVERD TELA, V8, P2679