SINGLE-BAND MODEL OF NORMAL-STATE TRANSPORT-PROPERTIES OF HIGH-TC COPPER OXIDES

被引：11

作者：

XING, DY

LIU, M

机构：

[1] CHINA CTR ADV SCI & TECHNOL,CTR THEORET PHYS,WORLD LAB,BEIJING,PEOPLES R CHINA

[2] SOUTHEAST UNIV,DEPT PHYS,NANJING,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.43.3744

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to account for linear temperature dependences of the in-plane resistivity and Hall carrier density observed in YBa2Cu3O7-y and other high-T(c) oxides, we have proposed a single-band model consisting of both extended states and localized ones, separated by a mobility edge. The scattering of the extended holes, which carry the current, by the localized electrons is assumed to be the dominant transport mechanism.

引用

页码：3744 / 3747

页数：4

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