0.5-W CW IMPATT DIODE AMPLIFIER FOR HIGH-CAPACITY 11-GHZ FM RADIO-RELAY EQUIPMENT

被引：8

作者：

KOMIZO, H

ITO, Y

ASHIDA, H

SHINODA, M

机构：

[1] FUJITSU LABS LTD,RADIO TRANSMISSION LAB,KAWASAKI,JAPAN

[2] FUJITSU LABS LTD,SEMICOND LAB,KAWASAKI,JAPAN

来源：

关键词：

D O I：

10.1109/JSSC.1973.1050339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：14 / 20

页数：7

共 13 条

[1]

HINES ME, 1966, IEEE T, VED13, P158

[2]

HINES ME, 1970, IEEE T ELECTRON DEVI, VED17, P1

ISOBE, T ;

TOKIDA, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (05) :873-+

[4]

KENYON ND, 1970 G MTT S DIG, P300

[5]

KOMIZO H, 1972 IEEE G MTT S DI, P176

[6]

KUVAS RL, 1971, 1971 DIG C HIGH FREQ, P145

[7]

LEE CW, 1971, MAR IEEE INT CONV DI, P368

[8] AN AVALANCHING SILICON DIODE MICROWAVE AMPLIFIER [J].

NAPOLI, LS ;

IKOLA, RJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1231-&

[9]

SCHERER EF, 1970, IEEE T MICROW THEORY, VMT18, P922

[10]

SCHERER EF, 1968, IEEE T MICROWAVE THE, VMT16, P781