ALAS/GAAS SCHOTTKY-COLLECTOR RESONANT-TUNNEL-DIODES

被引：11

作者：

KONISHI, Y ^{[1
]}

ALLEN, ST ^{[1
]}

REDDY, M ^{[1
]}

RODWELL, MJW ^{[1
]}

SMITH, RP ^{[1
]}

LIU, J ^{[1
]}

机构：

[1] JET PROP LAB,CTR SPACE MICROELECTR TECHNOL,PASADENA,CA 91109

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 12期

基金：

美国国家科学基金会;

关键词：

Electric space charge - Heterojunctions - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Tunnel diodes;

D O I：

10.1016/0038-1101(93)90212-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Schottky-collector resonant-tunnel-diode (SRTD) is an resonant-tunnel-diode with the normal N+ collector layer and ohmic contact replaced by direct Schottky contact to the space-charge layer, thereby eliminating the associated parasitic series resistance R(s). By scaling the Schottky collector contact to submicron dimensions, the device periphery-to-area ratio is increased, decreasing the periphery-dependent components of the parasitic resistance, and substantially increasing the device's maximum frequency of oscillation. We report measured d.c. and microwave parameters of planar SRTDs fabricated with lum-geometries in AlAs/GaAs.

引用

页码：1673 / 1676

页数：4