THE SI-28 PATH TO THE AVOGADRO CONSTANT - FIRST EXPERIMENTS AND OUTLOOK

被引:27
作者
BECKER, P
BETTIN, H
DEBIEVRE, P
HOLM, C
KUTGENS, U
SPIEWECK, F
STUMPEL, J
VALKIERS, S
ZULEHNER, W
机构
[1] COMMISS EUROPEAN COMMUNITIES,JOINT RES CTR,INST REFERENCE MAT & MEASUREMENTS,B-2440 GEEL,BELGIUM
[2] WACKER CHEMITRON GMBH,D-84479 BURGHAUSEN,GERMANY
[3] HOLM SILICIUM BEARBEITUNGSZENTRUM,D-84367 TANN,GERMANY
关键词
D O I
10.1109/19.377897
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the first time an attempt has been made to determine the lattice parameter, density, and molar mass of an isotopically highly enriched silicon-28 crystal. The goal was to achieve an independent value of Avogadro's constant of accuracy equal or superior to current best values obtained from similar measurements of very pure and highly perfect silicon single crystals of natural isotopic composition. That aim has been foiled by unexplained contaminations of the Si-28 crystal and perhaps other unidentified causes. Under these circumstances this paper restricts itself to a brief record of the method used and the results obtained. The value of the Avogadro constant so derived is considered of no further significance and differs from the CODATA and other credible values by about 1.10(-5)N (A).
引用
收藏
页码:522 / 525
页数:4
相关论文
共 7 条
[1]   A NEW DETERMINATION OF N-A [J].
BASILE, G ;
BECKER, P ;
BERGAMIN, A ;
BETTIN, H ;
CAVAGNERO, G ;
DEBIEVRE, P ;
KUTGENS, U ;
MANA, G ;
MOSCA, M ;
PAJOT, B ;
PANCIERA, R ;
PASIN, W ;
PETTORRUSO, S ;
PEUTO, A ;
SACCONI, A ;
STUMPEL, J ;
VALKIERS, S ;
VITTONE, E ;
ZOSI, G .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1995, 44 (02) :538-541
[2]  
BETTIN H, 1994, PTB-MITT, V104, P17
[3]   A MORE ACCURATE VALUE FOR THE AVOGADRO CONSTANT [J].
DEBIEVRE, P ;
VALKIERS, S ;
PEISER, S ;
BECKER, P ;
LUDICKE, F ;
SPIEWECK, F ;
STUMPEL, J .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1995, 44 (02) :530-532
[4]   AVOGADRO CONSTANT - CORRECTIONS TO AN EARLIER REPORT [J].
DESLATTES, RD ;
HENINS, A ;
SCHOONOVER, RM ;
CARROLL, CL ;
BOWMAN, HA .
PHYSICAL REVIEW LETTERS, 1976, 36 (15) :898-900
[5]   DETERMINATION OF DIFFERENCES IN THE DENSITY OF SILICON SINGLE-CRYSTALS BY OBSERVING THEIR FLOTATION AT DIFFERENT PRESSURES [J].
KOZDON, AF ;
SPIEWECK, F .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1992, 41 (03) :420-426
[6]  
SEYFRIED P, 1992, Z PHYS B CON MAT, V87, P289, DOI 10.1007/BF01309282
[7]  
VALKIERS S, 1993, IN PRESS 3RD P INT S