学术探索
学术期刊
新闻热点
数据分析
智能评审

INFLUENCE OF CO60 GAMMA IRRADIATION ON SURFACE AND BULK RECOMBINATION RATES IN SILICON

被引：2
作者：
LITTLEJO.MA
LADE, RW
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1967年 / NS14卷 / 06期
关键词：
D O I：
10.1109/TNS.1967.4324812
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：305 / &
相关论文
共 26 条
[1]   RECOMBINATION AND TRAPPING IN NORMAL AND ELECTRON-IRRADIATED SILICON [J].
BAICKER, JA .
PHYSICAL REVIEW, 1963, 129 (03) :1174-&
[2]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3]  
BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[4]   CONDITIONS FOR QUASI-EQUILIBRIUM IN A SEMICONDUDTOR SURFACE SPACE-CHARGE LAYER [J].
FRANKL, DR .
SURFACE SCIENCE, 1965, 3 (02) :101-&
[5]  
GLEANZER RH, 1965, J APPL PHYS, V36, P2197
[6]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
[7]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[8]   AN APPROXIMATION FOR GENERATION-RECOMBINATION CURRENT IN P-N JUNCTIONS [J].
HAUSER, JR .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (07) :743-&
[9]  
HAYNES JR, 1955, PHYS REV, V100, P106
[10]  
HEWES RA, 1966, THESIS U ILLINOIS
123