HOT-SPOT THERMAL RESISTANCE IN TRANSISTORS

被引：9

作者：

REICH, B

HAKIM, EB

机构：

[1] Electronic Components Laboratory, U. S. Army Electronics Command, Fort Monmouth, N.J.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 02期

关键词：

D O I：

10.1109/T-ED.1969.16585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward-and reverse-biased second breakdown is analyzed. Pulsed dc techniques are used in the investigation, allowing a wide range of possible operating biases to be applied. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：166 / &