EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE

被引:194
作者
CERDEIRA, F
CARDONA, M
机构
来源
PHYSICAL REVIEW B | 1972年 / 5卷 / 04期
关键词
D O I
10.1103/PhysRevB.5.1440
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
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页码:1440 / &
相关论文
共 38 条
[1]   EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].
ANASTASSAKIS, E ;
PINCZUK, A ;
BURSTEIN, E ;
POLLAK, FH ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+
[2]   SCREENED MODEL POTENTIAL FOR 25 ELEMENTS [J].
ANIMALU, AOE ;
HEINE, V .
PHILOSOPHICAL MAGAZINE, 1965, 12 (120) :1249-&
[3]  
Beilin V. M., 1970, Fizika Tverdogo Tela, V12, P684
[4]  
BEILIN VM, 1970, FIZ TVERD TELA+, V12, P531
[5]  
BIR GL, 1963, SOV PHYS-SOL STATE, V4, P1925
[6]  
BIR GL, 1962, FIZ TVERD TELA, V4, P2625
[7]  
Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85
[8]  
BRUNER LJ, 1956, PHYS REV LETTERS, V101, P944
[9]   ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J].
BRUST, D .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1337-&
[10]  
BUCHENAUER CJ, 1971, INT C LIGHT SCATTERI