INFLUENCE OF MORPHOLOGY AND STRUCTURE OF CU/IN ALLOYS ON THE PROPERTIES OF CUINSE2

被引:10
作者
PARRETTA, A
ADDONIZIO, ML
AGATI, A
PELLEGRINO, M
QUERCIA, L
CARDELLINI, F
KESSLER, J
SCHOCK, HW
机构
[1] ENEA,CRE CASACCIA,I-00060 ROME,ITALY
[2] UNIV STUTTGART,INST PHYS ELEKTR,W-7000 STUTTGART 80,GERMANY
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词
CUINSE(2); CHALCOPYRITE SEMICONDUCTORS; CUIN(3)SE(5); OVC; SOLAR CELL MATERIALS; SPUTTERING; MORPHOLOGY; ADHESION;
D O I
10.7567/JJAPS.32S3.80
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin CuInSe2 films were prepared by selenization of sputtered metal precursors. The surface morphology, phase comPosition and adhesion at the Mo/glass substrate of the ternary compound have been correlated to the structure of the precursor. Single phase, homogeneous, small grained (I mum) CuInSe2 arises from precursors showing stable phases (Cu11In9 and In). An ordered vacancy compound (CuIn3Se5) is likely present in In-rich (In>27 at.%) films. Precursors with a high content of the metastable CuIn2 phase show a very poor adhesion to the substrate.
引用
收藏
页码:80 / 83
页数:4
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