THERMAL CONDUCTIVITY OF SINTERED SEMICONDUCTOR ALLOYS

被引：74

作者：

PARROTT, JE

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1969年 / 2卷 / 01期

关键词：

D O I：

10.1088/0022-3719/2/1/320

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The thermal conductivity of sintered semiconductor alloys is calculated using the Klemens-Callaway model assuming that the boundary scattering can be adequately described by a mean free path. It is shown that the relative increase in thermal resistance increases with the amount of alloy disorder scattering and should be substantial in sintered germanium silicon alloys with particle sizes of the order of one micron.

引用

页码：147 / &

共 6 条

[1] LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES
ABELES, B
[J]. PHYSICAL REVIEW, 1963, 131 (05): : 1906 - &
[2] THERMAL CONDUCTIVITY OF GE-SI ALLOYS AT HIGH TEMPERATURES
ABELES, B
BEERS, DS
DISMUKES, JP
CODY, GD
[J]. PHYSICAL REVIEW, 1962, 125 (01): : 44 - &
[3] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES
CALLAWAY, J
[J]. PHYSICAL REVIEW, 1959, 113 (04): : 1046 - 1051
[4] BOUNDARY SCATTERING OF PHONONS IN SOLID SOLUTIONS
GOLDSMID, HJ
PENN, AW
[J]. PHYSICS LETTERS A, 1968, A 27 (08) : 523 - &
[5] THERMAL RESISTANCE DUE TO POINT DEFECTS AT HIGH TEMPERATURES
KLEMENS, PG
[J]. PHYSICAL REVIEW, 1960, 119 (02): : 507 - 509
[6] HIGH TEMPERATURE THERMAL CONDUCTIVITY OF SEMICONDUCTOR ALLOYS
PARROTT, JE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (522): : 726 - &

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