OPERATION OF SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) SOLAR-CELL - THEORY

[1] ANDERSON RN, UNPUBLISHED

[2] Anderson W. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P879

[3] BARRIER HEIGHT MODIFICATION IN SILICON SCHOTTKY (MIS) SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 453 - 457

[4] FACTORS WHICH MAXIMIZE EFFICIENCY OF CR-P-SI SCHOTTKY (MIS) SOLAR-CELLS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (06): : 1158 - 1161

[5] [Anonymous], 1845, COMMUNICATION

[6] BACK WALL SCHOTTKY-BARRIER SOLAR-CELL WITH AN INTERFACIAL LAYER [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 317 - 321

[7] BRANDHORST HW, COMMUNICATION

[8] Burk D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P971

[9] MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 51 - 53

[10] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[1] ANDERSON RN, UNPUBLISHED

[2] Anderson W. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P879

[3] BARRIER HEIGHT MODIFICATION IN SILICON SCHOTTKY (MIS) SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 453 - 457

[4] FACTORS WHICH MAXIMIZE EFFICIENCY OF CR-P-SI SCHOTTKY (MIS) SOLAR-CELLS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (06): : 1158 - 1161

[5] [Anonymous], 1845, COMMUNICATION

[6] BACK WALL SCHOTTKY-BARRIER SOLAR-CELL WITH AN INTERFACIAL LAYER [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 317 - 321

[7] BRANDHORST HW, COMMUNICATION

[8] Burk D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P971

[9] MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 51 - 53

[10] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706