METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INDIUM-PHOSPHIDE BY PULSING PRECURSORS

被引：14

作者：

CHEN, WK ^{[1
]}

CHEN, JC ^{[1
]}

ANTHONY, L ^{[1
]}

LIU, PL ^{[1
]}

机构：

[1] SUNY BUFFALO,CTR ELECTR & ELECTROOPT MAT,BUFFALO,NY 14260

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.101697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：987 / 989

页数：3

共 11 条

[1] RECENT PROGRESS IN ATOMIC LAYER EPITAXY OF III-V COMPOUNDS [J].

BEDAIR, SM ;

MCDERMOTT, BT ;

IDE, Y ;

KARAM, NH ;

HASHEMI, H ;

TISCHLER, MA ;

TIMMONS, M ;

TARN, JCL ;

ELMASRY, N .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :182-189

[2] ELUCIDATION OF THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH MECHANISM FOR INP [J].

BUCHAN, NI ;

LARSEN, CA ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1024-1026

[3]

CHEN WK, 1989, APPL PHYS LETT, V55

[4]

CHEN WK, IN PRESS P SPIE, V1144

[5] ATOMIC LAYER EPITAXY FOR THE GROWTH OF HETEROSTRUCTURE DEVICES [J].

DENBAARS, SP ;

DAPKUS, PD ;

BEYLER, CA ;

HARIZ, A ;

DZURKO, KM .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :195-200

[6] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[7] ATOMIC LAYER EPITAXY [J].

GOODMAN, CHL ;

PESSA, MV .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81

[8]

JEONG WG, IN PRESS P SPIE, V144

[9] FLOW-RATE MODULATION EPITAXY OF GAAS [J].

KOBAYASHI, N ;

MAKIMOTO, T ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12) :L962-L964

[10] MECHANISM OF SURFACE-REACTION IN GAAS LAYER GROWTH [J].

NISHIZAWA, J ;

KURABAYASHI, T ;

ABE, H ;

NOZOE, A .

SURFACE SCIENCE, 1987, 185 (1-2) :249-268

← 1 2 →